View 1N6263WT_4424857.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1N6263WT
SILICON SCHOTTKY BARRIER DIODE
for general purpose applications
PINNING PIN 1 2 DESCRIPTION Cathode Anode
2
1
I
Top View Marking Code: "I" Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage Power Dissipation Max. Single Cycle Surge Forward Current (10 s Square wave) Junction Temperature Storage Temperature Range
Symbol VRRM Ptot IFSM Tj TS
Value 40 400 2 150 - 55 to + 150
Unit V mW A
O
C C
O
Characteristics at Ta = 25 OC
Parameter Reverse Breakdown Voltage at IR = 10 A Forward Voltage at IF = 1 mA at IF = 15 mA Reverse Leakage Current at VR = 30 V Junction Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = IR = 5 mA, recover to 0.1 IR Symbol V(BR)R Min. 40 Max. 0.39 0.9 200 2.2 1 Unit V
VF
V
IR Ctot trr
nA pF ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 23/11/2006
1N6263WT
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads SOD-523
ALL ROUND
A C
HE
D
A
E
bp
UNIT
mm
A
0.70 0.60
bp
0.4 0.3
C
0.135 0.127
D
1.25 1.15
E
0.85 0.75
HE
1.7 1.5
V
0.1
5
O
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 23/11/2006

▲Up To Search▲

Price & Availability of 1N6263WT

	To Download 1N6263WT Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .